MATHEMATICAL MODEL OF THE ALLOYING PROCESS AT THE EPITAXIAL SEMICONDUCTOR STRUCTURE GROWTH

Autor/autori: Eng. Simion BARANOV PhD (Rep. Moldova), Prof. Eng. Bartolomeu IZVOREANU PhD (Rep. Moldova), Prof. Leonid GORCEAC PhD (Rep. Moldova), Prof. Petru GASHIN PhD (Rep. Moldova), Lecturer Eng. Irina COJUHARI (Rep. Moldova)

Rezumat: In aceasta lucrare este prezentat modelul matematic al procesului de aliere cu GaAs a straturilor epitaxiale obtinute in sistemul Ga-AsCl3-H2 cu transport de reactii. Controlul in sistemul automat se realizeaza prin reglarea temperaturii dopantilor de Zn/Te care alimeanteaza cu fluxul de vapori camera reactorului. Fluxul de vapori generat in camera sursei este transportat de fluxul de hidrogen si ajunge in zona de crestere a straturilor epitaxiale cu o retinere. In sistemul automat parametrul de optimizare este timpul de umplere cu vapori a reactorului si timpul de evacuare.

Cuvinte cheie: GaAs, procesul de aliere straturilor epitaxiale, modelul matematic

Abstract: In this paper is presented the mathematical model of the alloying process of GaAs epitaxial layers obtained by the transport reactions in the Ga-AsCl3-H2 system. The automatic control system (ACS) works by temperature measurement of alloying substance (Zn/Te). The vapour flux, generated in the chamber of alloying source and transported in the reactor by the hydrogen flow, it is arrived in the growing zone with a delay. In this technological process the optimization parameters are the time of the reactor filling with vapour and the time of evacuation after the vapour flow is interrupted

Keywords: GaAs, epitaxial technology, alloying automatic control, mathematic model

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